A 0.8 /spl mu/m CMOS pixel IC for low energy X-ray spectroscopy with on-chip detector

A charge sensitive readout chain has been developed for pixel applications with small die area and low power dissipation. The overall measured gain is 500 mV/fC; the ENC is 15.3e rms@15 fF; the power dissipation is 1.5 mW@3.3 V with 30 pF load capacitance; the active die area is 270 /spl mu/m/spl ti...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2000-06, Vol.47 (3), p.806-809
Main Authors: Kapnistis, C., Misiakos, K., Haralabidis, N., Karydas, A.G.
Format: Article
Language:English
Subjects:
Area measurement
Capacitance measurement
CMOS integrated circuits
CMOS technology
Detectors
Diodes
Gain measurement
Power dissipation
Power measurement
Spectroscopy
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Summary:A charge sensitive readout chain has been developed for pixel applications with small die area and low power dissipation. The overall measured gain is 500 mV/fC; the ENC is 15.3e rms@15 fF; the power dissipation is 1.5 mW@3.3 V with 30 pF load capacitance; the active die area is 270 /spl mu/m/spl times/270 /spl mu/m. A detector has been integrated on the same substrate with the electronics. It consists of a 20 /spl mu/m/spl times/20 /spl mu/m diode, which is DC coupled to the input of the readout chain. The IC has been designed and fabricated in a 0.8 /spl mu/m commercially available CMOS technology. A series of tests has been performed employing X-ray sources with energies from 2.3 to 3.3 keV. The experimental results are reported and the noise characteristics of the system are evaluated. With a FWHM of less than 300 eV in room temperature, low energy X-ray spectroscopy is clearly feasible using an integrated detector element in commercial CMOS technology.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.856521