Numerical simulation of the temperature dependent dark current characteristics for GaAs-based blocked impurity band (BIB) terahertz detectors

Dark current as a critical parameter to evaluate the performance of Gallium Arsenide (GaAs) blocked-impurity- and (BIB) terahertz detector has attracted a lot of attentions from theoretical and experimental researchers. Accordingly, several methods have been developed to measure the dark current of...

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Bibliographic Details
Main Authors: Wang, Xiaodong, Chen, Yulu, Wang, Bingbing, Zhang, Chuansheng, Chen, Xiaoyao, Zhang, Haoxing
Format: Conference Proceeding
Language:English
Subjects:
Biological system modeling
Blocked-impurity-band (BIB)
Dark current
Detector
Detectors
Gallium arsenide
Gallium Arsenide (GaAs)
Numerical models
Numerical simulation
Temperature
Temperature measurement
Terahertz
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Summary:Dark current as a critical parameter to evaluate the performance of Gallium Arsenide (GaAs) blocked-impurity- and (BIB) terahertz detector has attracted a lot of attentions from theoretical and experimental researchers. Accordingly, several methods have been developed to measure the dark current of BIB detectors. In this paper, the temperature dependent dark current characteristics of GaAs-based BIB detectors have been simulated. As a new analysis method, information about the carrier transition and transport mechanism can be easily extracted.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570243