Performance Improvement of GaN-Based Light-Emitting Diodes With a Microhole Array, 45° Sidewalls, and a SiO2 Nanoparticle/Microsphere Passivation Layer

The characteristics of GaN-based light-emitting diodes (LEDs) with a hybrid structure incorporating a microhole array, 45 sidewalls, and an appropriate SiO 2 nanoparticle (NP)/microsphere (MSs) passivation layer are studied and reported. The use of a SiO 2 NP/MSs passivation layer causes a remarkabl...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-01, Vol.66 (1), p.505-511
Main Authors: Chang, Ching-Hong, Lee, Yu-Lin, Wang, Zih-Fong, Liu, Rong-Chau, Tsai, Jung-Hui, Liu, Wen-Chau
Format: Article
Language:English
Subjects:
Coatings
Cones
Gallium nitride
Gallium nitrides
GaN
hybrid structure
Hybrid structures
Leakage current
Light emitting diodes
light extraction efficiency (LEE)
Luminous efficacy
microhole array
Microholes
microsphere (MSs)
nanoparticle (NP)
Nanoparticles
Optical properties
Organic light emitting diodes
Passivation
Passivity
Performance evaluation
Photonics
Reflection
sidewalls
Silicon dioxide
SiO
Substrates
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Summary:The characteristics of GaN-based light-emitting diodes (LEDs) with a hybrid structure incorporating a microhole array, 45 sidewalls, and an appropriate SiO 2 nanoparticle (NP)/microsphere (MSs) passivation layer are studied and reported. The use of a SiO 2 NP/MSs passivation layer causes a remarkable reduction in reverse-biased leakage current. The employment of this hybrid structure leads to substantial enhancements in optical properties without any degradation in electrical performance. In addition, a lower content of SiO 2 NP in the mixed SiO 2 NP/MSs solution leads to enhanced optical behavior due to the improved transmittance. Experimentally, as compared with a conventional LED (Device A), the studied Device E shows 50.6%, 50.9%, 48.4%, and 49.9% enhancements in light output power, luminous flux, luminous efficacy, and wall-plug efficiency, respectively. These advantages are mainly attributed to the increased scattering probability and the opportunity to find photon escape cones as well as the reduced total internal reflection and Fresnel reflection effects. Therefore, the studied hybrid structure provides a promise for high-performance GaN-based LED applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2882802