Q-enhancing technique for rf CMOS active inductor

A design technique for realising a very-high Q CMOS active inductor operating in the RF-band is described in this paper. The proposed active inductor is based on double-feedback transconductor topology in which negative feedback is used to realise inductive input impedance while positive feedback is...

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Bibliographic Details
Main Authors: Yodprasit, U., Ngarmnil, J.
Format: Conference Proceeding
Language:English
Subjects:
Active inductors
Band pass filters
CMOS technology
Impedance
Negative feedback
Q factor
Resonant frequency
Topology
Transconductors
Voltage
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Summary:A design technique for realising a very-high Q CMOS active inductor operating in the RF-band is described in this paper. The proposed active inductor is based on double-feedback transconductor topology in which negative feedback is used to realise inductive input impedance while positive feedback is employed to produce a negative resistance for canceling the inductor loss, hence an enhancing of the Q factor. In order to verify the effectiveness of the proposed technique, a very-high Q (Q>1,000) second-order bandpass filter has been implemented. Simulation results show that the filter exhibits stable Q factor of 12,000, the resonant frequency can be tuned from 1.007 GHz to 1.023 GHz and the input-referred third-order intercept point (IIP3) of -25 dBm (at 1.023 GHz centre frequency and 12,000 Q factor) under a 3.3 V supply voltage.
DOI:10.1109/ISCAS.2000.857503