Characterization of Widely Used Bipolar Transistors in Wide Temperature Range Before and After Ionizing Radiation Impact

The electryical characteristics of widely used bipolar transistors on temperature before and after ionizing radiation impact were investigated. The operation at low temperatures can be considered as the worst case for bipolar devices.

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Bibliographic Details
Main Authors: Bakerenkov, Alexander S., Koziukov, Aleksandr E., Rodin, Alexander S., Felitsyn, Vladislav A., Pershenkov, Viacheslav S., Glukhov, Nikita S., Belyakov, Vladimir V.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Performance evaluation
Radiation effects
Temperature dependence
Temperature distribution
Temperature measurement
Online Access:Request full text
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Description
Summary:The electryical characteristics of widely used bipolar transistors on temperature before and after ionizing radiation impact were investigated. The operation at low temperatures can be considered as the worst case for bipolar devices.
ISSN:2154-0535
DOI:10.1109/NSREC.2018.8584306