Measurement of Light Sensitivity of Chromium/Porous Silicon Schottky Diodes Made by Silicon Nitride Masking

Schottky diodes created on a well-defined porous silicon active area are characterized to determine light sensitivity. The conventional Schottky diodes used the normal bulk n-type (or p-type) substrate to build the diode and to use a metal to form a junction called the Schottky junction. We can chan...

Full description

Saved in:
Bibliographic Details
Main Authors: Selvam, Karthik, Rajashankar, Suma, Haji-Sheikh, Michael J.
Format: Conference Proceeding
Language:English
Subjects:
band-gap
Etching
photo-diodes
Porous silicon
Schottky diodes
Silicon nitride
Tungsten
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Schottky diodes created on a well-defined porous silicon active area are characterized to determine light sensitivity. The conventional Schottky diodes used the normal bulk n-type (or p-type) substrate to build the diode and to use a metal to form a junction called the Schottky junction. We can change the active area to porous silicon (pSi), in place of bulk silicon, we can take advantage of the shift in band. To create a well-defined device, silicon nitride is coated both on the front and back sides of the wafers, and using dry etching, the silicon nitride is selectively removed prior to pore formation. The devices are then metallized using chromium/gold, titanium/gold and tungsten/gold. Barrier heights were measured and then chromium/pSi samples were exposed to light at controlled temperatures.
ISSN:2156-8073
DOI:10.1109/ICSensT.2018.8603629