Measurement of Light Sensitivity of Chromium/Porous Silicon Schottky Diodes Made by Silicon Nitride Masking

Schottky diodes created on a well-defined porous silicon active area are characterized to determine light sensitivity. The conventional Schottky diodes used the normal bulk n-type (or p-type) substrate to build the diode and to use a metal to form a junction called the Schottky junction. We can chan...

Full description

Saved in:
Bibliographic Details
Main Authors: Selvam, Karthik, Rajashankar, Suma, Haji-Sheikh, Michael J.
Format: Conference Proceeding
Language:English
Subjects:
band-gap
Etching
photo-diodes
Porous silicon
Schottky diodes
Silicon nitride
Tungsten
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 335
container_issue
container_start_page 330
container_title
container_volume
creator Selvam, Karthik
Rajashankar, Suma
Haji-Sheikh, Michael J.
description Schottky diodes created on a well-defined porous silicon active area are characterized to determine light sensitivity. The conventional Schottky diodes used the normal bulk n-type (or p-type) substrate to build the diode and to use a metal to form a junction called the Schottky junction. We can change the active area to porous silicon (pSi), in place of bulk silicon, we can take advantage of the shift in band. To create a well-defined device, silicon nitride is coated both on the front and back sides of the wafers, and using dry etching, the silicon nitride is selectively removed prior to pore formation. The devices are then metallized using chromium/gold, titanium/gold and tungsten/gold. Barrier heights were measured and then chromium/pSi samples were exposed to light at controlled temperatures.
doi_str_mv 10.1109/ICSensT.2018.8603629
format conference_proceeding
fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_8603629</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8603629</ieee_id><sourcerecordid>8603629</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-ae5052a07b9761eb46d72ab60427e89a7bbbb1cd137f0dd38f3124061b4a3f743</originalsourceid><addsrcrecordid>eNo9kF1rwjAYhbPBYOL8BdtF_kA1b9Im6eXovgTdBrprSe1bfadtRhMH_fcqk52bA8-B5-Iw9gBiDCDyybRYYBuWYynAjq0WSsv8io1yYyFTVmeQGn3NBhIynVhh1C0bhfAthABtpcrtgO3m6MKhwwbbyH3NZ7TZRn62UqRfiv0ZFtvON3RoJp--84fAF7SntW_5Yr31Me56_kS-wsDnrkJe9v_7O8WOTmjuwo7azR27qd0-4OjSQ_b18rws3pLZx-u0eJwlBCaLicNMZNIJU-ZGA5aprox0pRapNGhzZ8pTYF2BMrWoKmVrBTIVGsrUqdqkasju_7yEiKufjhrX9avLPeoINQpbNw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Measurement of Light Sensitivity of Chromium/Porous Silicon Schottky Diodes Made by Silicon Nitride Masking</title><source>IEEE Xplore All Conference Series</source><creator>Selvam, Karthik ; Rajashankar, Suma ; Haji-Sheikh, Michael J.</creator><creatorcontrib>Selvam, Karthik ; Rajashankar, Suma ; Haji-Sheikh, Michael J.</creatorcontrib><description>Schottky diodes created on a well-defined porous silicon active area are characterized to determine light sensitivity. The conventional Schottky diodes used the normal bulk n-type (or p-type) substrate to build the diode and to use a metal to form a junction called the Schottky junction. We can change the active area to porous silicon (pSi), in place of bulk silicon, we can take advantage of the shift in band. To create a well-defined device, silicon nitride is coated both on the front and back sides of the wafers, and using dry etching, the silicon nitride is selectively removed prior to pore formation. The devices are then metallized using chromium/gold, titanium/gold and tungsten/gold. Barrier heights were measured and then chromium/pSi samples were exposed to light at controlled temperatures.</description><identifier>EISSN: 2156-8073</identifier><identifier>EISBN: 9781538651476</identifier><identifier>EISBN: 1538651475</identifier><identifier>DOI: 10.1109/ICSensT.2018.8603629</identifier><language>eng</language><publisher>IEEE</publisher><subject>band-gap ; Etching ; photo-diodes ; Porous silicon ; Schottky diodes ; Silicon nitride ; Tungsten</subject><ispartof>2018 12th International Conference on Sensing Technology (ICST), 2018, p.330-335</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8603629$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,27925,54555,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8603629$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Selvam, Karthik</creatorcontrib><creatorcontrib>Rajashankar, Suma</creatorcontrib><creatorcontrib>Haji-Sheikh, Michael J.</creatorcontrib><title>Measurement of Light Sensitivity of Chromium/Porous Silicon Schottky Diodes Made by Silicon Nitride Masking</title><title>2018 12th International Conference on Sensing Technology (ICST)</title><addtitle>ICSensT</addtitle><description>Schottky diodes created on a well-defined porous silicon active area are characterized to determine light sensitivity. The conventional Schottky diodes used the normal bulk n-type (or p-type) substrate to build the diode and to use a metal to form a junction called the Schottky junction. We can change the active area to porous silicon (pSi), in place of bulk silicon, we can take advantage of the shift in band. To create a well-defined device, silicon nitride is coated both on the front and back sides of the wafers, and using dry etching, the silicon nitride is selectively removed prior to pore formation. The devices are then metallized using chromium/gold, titanium/gold and tungsten/gold. Barrier heights were measured and then chromium/pSi samples were exposed to light at controlled temperatures.</description><subject>band-gap</subject><subject>Etching</subject><subject>photo-diodes</subject><subject>Porous silicon</subject><subject>Schottky diodes</subject><subject>Silicon nitride</subject><subject>Tungsten</subject><issn>2156-8073</issn><isbn>9781538651476</isbn><isbn>1538651475</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2018</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo9kF1rwjAYhbPBYOL8BdtF_kA1b9Im6eXovgTdBrprSe1bfadtRhMH_fcqk52bA8-B5-Iw9gBiDCDyybRYYBuWYynAjq0WSsv8io1yYyFTVmeQGn3NBhIynVhh1C0bhfAthABtpcrtgO3m6MKhwwbbyH3NZ7TZRn62UqRfiv0ZFtvON3RoJp--84fAF7SntW_5Yr31Me56_kS-wsDnrkJe9v_7O8WOTmjuwo7azR27qd0-4OjSQ_b18rws3pLZx-u0eJwlBCaLicNMZNIJU-ZGA5aprox0pRapNGhzZ8pTYF2BMrWoKmVrBTIVGsrUqdqkasju_7yEiKufjhrX9avLPeoINQpbNw</recordid><startdate>201812</startdate><enddate>201812</enddate><creator>Selvam, Karthik</creator><creator>Rajashankar, Suma</creator><creator>Haji-Sheikh, Michael J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201812</creationdate><title>Measurement of Light Sensitivity of Chromium/Porous Silicon Schottky Diodes Made by Silicon Nitride Masking</title><author>Selvam, Karthik ; Rajashankar, Suma ; Haji-Sheikh, Michael J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-ae5052a07b9761eb46d72ab60427e89a7bbbb1cd137f0dd38f3124061b4a3f743</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2018</creationdate><topic>band-gap</topic><topic>Etching</topic><topic>photo-diodes</topic><topic>Porous silicon</topic><topic>Schottky diodes</topic><topic>Silicon nitride</topic><topic>Tungsten</topic><toplevel>online_resources</toplevel><creatorcontrib>Selvam, Karthik</creatorcontrib><creatorcontrib>Rajashankar, Suma</creatorcontrib><creatorcontrib>Haji-Sheikh, Michael J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Selvam, Karthik</au><au>Rajashankar, Suma</au><au>Haji-Sheikh, Michael J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Measurement of Light Sensitivity of Chromium/Porous Silicon Schottky Diodes Made by Silicon Nitride Masking</atitle><btitle>2018 12th International Conference on Sensing Technology (ICST)</btitle><stitle>ICSensT</stitle><date>2018-12</date><risdate>2018</risdate><spage>330</spage><epage>335</epage><pages>330-335</pages><eissn>2156-8073</eissn><eisbn>9781538651476</eisbn><eisbn>1538651475</eisbn><abstract>Schottky diodes created on a well-defined porous silicon active area are characterized to determine light sensitivity. The conventional Schottky diodes used the normal bulk n-type (or p-type) substrate to build the diode and to use a metal to form a junction called the Schottky junction. We can change the active area to porous silicon (pSi), in place of bulk silicon, we can take advantage of the shift in band. To create a well-defined device, silicon nitride is coated both on the front and back sides of the wafers, and using dry etching, the silicon nitride is selectively removed prior to pore formation. The devices are then metallized using chromium/gold, titanium/gold and tungsten/gold. Barrier heights were measured and then chromium/pSi samples were exposed to light at controlled temperatures.</abstract><pub>IEEE</pub><doi>10.1109/ICSensT.2018.8603629</doi><tpages>6</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier EISSN: 2156-8073
ispartof 2018 12th International Conference on Sensing Technology (ICST), 2018, p.330-335
issn 2156-8073
language eng
recordid cdi_ieee_primary_8603629
source IEEE Xplore All Conference Series
subjects band-gap
Etching
photo-diodes
Porous silicon
Schottky diodes
Silicon nitride
Tungsten
title Measurement of Light Sensitivity of Chromium/Porous Silicon Schottky Diodes Made by Silicon Nitride Masking
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T20%3A07%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Measurement%20of%20Light%20Sensitivity%20of%20Chromium/Porous%20Silicon%20Schottky%20Diodes%20Made%20by%20Silicon%20Nitride%20Masking&rft.btitle=2018%2012th%20International%20Conference%20on%20Sensing%20Technology%20(ICST)&rft.au=Selvam,%20Karthik&rft.date=2018-12&rft.spage=330&rft.epage=335&rft.pages=330-335&rft.eissn=2156-8073&rft_id=info:doi/10.1109/ICSensT.2018.8603629&rft.eisbn=9781538651476&rft.eisbn_list=1538651475&rft_dat=%3Cieee_CHZPO%3E8603629%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-ae5052a07b9761eb46d72ab60427e89a7bbbb1cd137f0dd38f3124061b4a3f743%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=8603629&rfr_iscdi=true