Experimental Study on the Role of Polarization Switching in Subthreshold Characteristics of HfO2-based Ferroelectric and Anti-ferroelectric FET

We have experimentally studied and revealed the direct relationship between polarization switching and steep subthreshold slope (SS) characteristics of HfO 2 -bascd ferroelectric FET (FeFET) and Anti-FeFET (A-FeFET) by systematically designing and fabricating devices, and monitoring I_{g} with high...

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Bibliographic Details
Main Authors: Jin, Chengji, Jang, Kyungmin, Saraya, Takuya, Hiramoto, Toshiro, Kobayashi, Masaharu
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Capacitors
Logic gates
MISFETs
Monitoring
Switches
Zirconium
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Summary:We have experimentally studied and revealed the direct relationship between polarization switching and steep subthreshold slope (SS) characteristics of HfO 2 -bascd ferroelectric FET (FeFET) and Anti-FeFET (A-FeFET) by systematically designing and fabricating devices, and monitoring I_{g} with high resolution, for the first time. In the circumstances that charge injection prevents polarization switching from occurring in subthreshold region of FeFET, we have obtained two major findings: (1) Sub-60 SS as low as 23.5 mV/dec is observed by adjusting V_{g} bias sequence, which is attributed to charge injection assisted by polarization switching. (2) Anti-ferroelectric facilitates to align polarization switching in subthreshold region and SS can be improved in A-FeFET as a consequence, which is directly observed by monitoring I_{g} .
ISSN:2156-017X
DOI:10.1109/IEDM.2018.8614486