Through-silicon-trench in back-side-illuminated CMOS image sensors for the improvement of gate oxide long term performance

To improve the gate oxide long term performance of MOSFETs in back side illuminated CMOS image sensors the wafer back is patterned with suitable through-silicon-trenches. We demonstrate that the reliability improvement is due to the annealing of the gate oxide border traps thanks to passivating chem...

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Bibliographic Details
Main Authors: Vici, A., Russo, F., Lovisi, N., Latessa, L., Marchioni, A., Casella, A., Irrera, F.
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Fluctuations
Logic gates
MOSFET circuits
Noise measurement
Silicon
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Summary:To improve the gate oxide long term performance of MOSFETs in back side illuminated CMOS image sensors the wafer back is patterned with suitable through-silicon-trenches. We demonstrate that the reliability improvement is due to the annealing of the gate oxide border traps thanks to passivating chemical species carried by trenches.
ISSN:2156-017X
DOI:10.1109/IEDM.2018.8614571