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Towards scalable silicon quantum computing
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabili...
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| container_end_page | 6.5.4 |
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| creator | Vinet, M. Hutin, L. Bertrand, B. Barraud, S. Hartmann, J.-M. Kim, Y.-J. Mazzocchi, V. Amisse, A. Bohuslavskyi, H. Bourdet, L. Crippa, A. Jehl, X. Maurand, R. Niquet, Y.-M. Sanquer, M. Venitucci, B. Jadot, B. Chanrion, E. Mortemousque, P.-A. Spence, C. Urdampilleta, M. De Franceschi, S. Meunier, T. |
| description | We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. |
| doi_str_mv | 10.1109/IEDM.2018.8614675 |
| format | conference_proceeding |
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We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2018.8614675</doi></addata></record> |
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| identifier | EISSN: 2156-017X |
| ispartof | 2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.6.5.1-6.5.4 |
| issn | 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_8614675 |
| source | IEEE Xplore All Conference Series |
| subjects | Couplings Logic gates Quantum dots Qubit Rough surfaces Silicon |
| title | Towards scalable silicon quantum computing |
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