Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

A vertical ferroelectric HfO 2 field effect transistor based on 3-D macaroni NAND architecture is reported for the first time. Up to 2 V memory window was obtained after the application of 100 ns program/erase pulses. Flash-like endurance of 10 4 cycles is reported and first reliability assessments...

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Bibliographic Details
Main Authors: Florent, K., Pesic, M., Subirats, A., Banerjee, K., Lavizzari, S., Arreghini, A., Di Piazza, L., Potoms, G., Sebaai, F., McMitchell, S. R. C., Popovici, M., Groeseneken, G., Van Houdt, J.
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Erbium
Hafnium compounds
Iron
Logic gates
Reliability
Transistors
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Summary:A vertical ferroelectric HfO 2 field effect transistor based on 3-D macaroni NAND architecture is reported for the first time. Up to 2 V memory window was obtained after the application of 100 ns program/erase pulses. Flash-like endurance of 10 4 cycles is reported and first reliability assessments were performed.
ISSN:2156-017X
DOI:10.1109/IEDM.2018.8614710