Characterization of HfO2/TiOx ReRAM Cells in Pulse Operation Mode

Redox-based resistive random access memories (ReRAM) are promising candidates for the use in 'beyond-von Neumann' architectures. One key issue for utilizing ReRAM for e.g. neuromorphic applications is a gradual SET and RESET behavior, allowing to write various resistance states emulating s...

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Bibliographic Details
Main Authors: Hardtdegen, A., Cuppers, F., von Witzleben, M., Bottger, U., Menzel, S., Waser, R., Hoffmann-Eifert, S.
Format: Conference Proceeding
Language:English
Subjects:
Electrical resistance measurement
Hafnium compounds
Neuromorphics
Performance evaluation
Resistance
Switches
Transient analysis
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Summary:Redox-based resistive random access memories (ReRAM) are promising candidates for the use in 'beyond-von Neumann' architectures. One key issue for utilizing ReRAM for e.g. neuromorphic applications is a gradual SET and RESET behavior, allowing to write various resistance states emulating synaptic weights. However, a typical SET event for filamentary-like valence change mechanism devices is happening abrupt due to its physical principle. In this work we demonstrate a gradual SET behavior for \text{HfO}_{2}/\text{TiO}_{\mathrm{x}} ReRAM cells in pulse mode. The results are discussed in view of the inherent properties of the particular bilayer structure.
ISSN:1944-9380
DOI:10.1109/NANO.2018.8626314