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Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications
We report on the power and linearity performance of metal-organic chemical vapor deposition grown polarization-engineered novel structure that combines the AlGaN/GaN high-electron-mobility transistor with a graded InGaN sub-channel layer. The fabricated transistors with composite two-dimensional(2D)...
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Published in: | IEEE electron device letters 2019-04, Vol.40 (4), p.522-525 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report on the power and linearity performance of metal-organic chemical vapor deposition grown polarization-engineered novel structure that combines the AlGaN/GaN high-electron-mobility transistor with a graded InGaN sub-channel layer. The fabricated transistors with composite two-dimensional(2D) and three-dimensional(3D) electron channels showed nearly flat transconductance and power gain profiles. The maximum f T and f max values of 18 GHz and 38 GHz were measured for 0.7-μm gate-length transistors. Load-pull measurement at 10 GHz revealed a maximum output power of 2.2 W/mm. Two-tone measurement at 10 GHz showed an excellent OIP3 of 38 dBm for 150-μm device width and a corresponding linearity figure of merit OIP3/P DC of 9.7 dB. These results suggest that InGaN-based composite 2D-3D channel transistors could be useful for high-frequency applications requiring high linearity. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2019.2899100 |