High-power 1.3-/spl mu/m InGaAsP/InP lasers and amplifiers with tapered gain regions

Summary form only given. We have previously reported tapered lasers at 1.3 /spl mu/m with cw output powers of 0.5 W of which nearly 80% was in the central lobe of a nearly diffraction-limited far field. Here we report laser and amplifier results on devices fabricated using improved processing techni...

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Bibliographic Details
Main Authors: Donnelly, J.P., Walpole, J.N., Betts, G.E., Groves, S.H., Woodhouse, J.D., Missaggia, L.J., O'Donnell, F.J., Bailey, R.J.
Format: Conference Proceeding
Language:English
Subjects:
Diffraction
High power amplifiers
Indium phosphide
Optical design
Optical materials
Power amplifiers
Power generation
Power lasers
Quantum well lasers
Waveguide lasers
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Summary:Summary form only given. We have previously reported tapered lasers at 1.3 /spl mu/m with cw output powers of 0.5 W of which nearly 80% was in the central lobe of a nearly diffraction-limited far field. Here we report laser and amplifier results on devices fabricated using improved processing techniques and a new device design. The new device incorporates a ridge waveguide section with the tapered gain region as illustrated and is similar to that reported earlier for 980-nm tapered lasers and amplifiers. The material used for these devices is a stepped separate-confinement heterostructure with three compressively strained InGaAsP-InP quantum wells.