Theoretical calculation of gain for interdiffused GaAs/AlGaAs quantum well lasers

Summary form only given. In this work we investigate for the first time to our knowledge, the influence of impurity-free interdiffusion on the modal gain of GaAs-Al/sub 0.2/Ga/sub 0.8/As SCH SQW lasers, including valence band mixing. Energy levels for the conduction and valence bands were calculated...

Full description

Saved in:
Bibliographic Details
Main Authors: Gomez-Alcala, R., Fraile-Pelaez, F.J., Esquivias, I.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier density
Electrons
Energy states
Gallium arsenide
Laser theory
Quantum mechanics
Quantum well lasers
Surface emitting lasers
Telecommunications
Vertical cavity surface emitting lasers
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Summary form only given. In this work we investigate for the first time to our knowledge, the influence of impurity-free interdiffusion on the modal gain of GaAs-Al/sub 0.2/Ga/sub 0.8/As SCH SQW lasers, including valence band mixing. Energy levels for the conduction and valence bands were calculated with the finite element method. The modal gain was calculated using the model of Aversa and Iizuka.