Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications

In this work, the temperature reliability of junctionless twin gate recessed channel (JL-TGRC) MOSFET at high temperature for different materials have been realized for low power digital-logic applications. Along with thermal analysis, several gate materials (Au-ITO, Au-Mo, HfO 2 -ZrO 2 , SiC-SiC, Z...

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Bibliographic Details
Main Authors: Kumar, Ajay, Singh, Samarth, Tiwari, Balark, Chaujar, Rishu
Format: Conference Proceeding
Language:English
Subjects:
AND gate
Indium tin oxide
JL-TGRC
Logic gates
MOSFET
NAND gate
Potential
Reliability
Switches
Temperature
Thermal analysis
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Summary:In this work, the temperature reliability of junctionless twin gate recessed channel (JL-TGRC) MOSFET at high temperature for different materials have been realized for low power digital-logic applications. Along with thermal analysis, several gate materials (Au-ITO, Au-Mo, HfO 2 -ZrO 2 , SiC-SiC, ZrO 2 -ZrO 2 and ITO-ITO) for their applicability in the domain of low voltage/power digital electronics have been discussed. ITO (Indium Tin Oxide) and ZrO 2 have been chosen among all the materials for further thermal analysis and is considered to be a promising gate material having fast responsive transfer characteristics with V th = 0.2V and V sat > 1V at 500K. Further, the device gives a full functionality of 2-input digital 'AND' gate logic. All the simulations regarding thermal analysis, structure, and gate material applicability have been performed using Silvaco TCAD. Thus JL-TGRC MOSFET with swift characteristics is reliable for low power digital electronics applications.
ISSN:2159-3450
DOI:10.1109/TENCON.2018.8650267