Self-induced trapping of optical beams in semiconductors

Summary form only given. Spatial solitons in photorefractive materials have been a subject of recent interest. In this paper we report self-induced trapping in one dimension in the semi-insulating compound semiconductor InP:Fe. In particular, we observe that for milliwatt laser beams diffraction is...

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Bibliographic Details
Main Authors: Chauvet, M., Hawkins, S.A., Salamo, G.J., Segev, M., Bliss, D.F., Bryant, G.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier processes
Conducting materials
Diffraction
Laser beams
Optical beams
Photorefractive effect
Photorefractive materials
Semiconductor lasers
Solitons
Steady-state
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Summary:Summary form only given. Spatial solitons in photorefractive materials have been a subject of recent interest. In this paper we report self-induced trapping in one dimension in the semi-insulating compound semiconductor InP:Fe. In particular, we observe that for milliwatt laser beams diffraction is exactly balanced by the photorefractively induced index change.