InGaAs/GaAs/InGaP quantum well laser with etched mirrors obtained by electron cyclotron resonance plasma

InGaAs/GaAs quantum well lasers with InGaP cladding layer were grown by chemical beam epitaxy (CBE). Low transparency current of J/sub tr/=150 A/cm/sup 2/ and optical loss of 50 cm/sup -1/ were obtained for broad-area lasers with conventional cleaved facets. Lasers with mirrors obtained by electron...

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Bibliographic Details
Main Authors: Mestanza, S.N.M., Von Zuben, A.A., Frateschi, N.C., Bettini, J., de Carvalho, M.M.G.
Format: Conference Proceeding
Language:English
Subjects:
Chemical lasers
Electron optics
Epitaxial growth
Etching
Gallium arsenide
Indium gallium arsenide
Laser beams
Mirrors
Molecular beam epitaxial growth
Quantum well lasers
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Summary:InGaAs/GaAs quantum well lasers with InGaP cladding layer were grown by chemical beam epitaxy (CBE). Low transparency current of J/sub tr/=150 A/cm/sup 2/ and optical loss of 50 cm/sup -1/ were obtained for broad-area lasers with conventional cleaved facets. Lasers with mirrors obtained by electron cyclotron resonance plasma (ECR) etching were fabricated. Threshold current of 200 and 325 mA were obtained for lasers 40 /spl mu/m wide and cavity length of 300 and 200 /spl mu/m, respectively.
DOI:10.1109/IMOC.1999.867028