Monolithic GaAs PHEMT MMICs integrated with high performance MEMS microrelays

We report the successful integration of MEMS microrelays with PHEMT MMIC in a single monolithic structure. The process we describe here allows us to build MEMS microrelays along GaAs PHEMT devices without any sacrifice in performance or yield to either device. The test structure used the switches to...

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Bibliographic Details
Main Authors: Sovero, E.A., Mihailovich, R., Deakin, D.S., Higgins, J.A., Yao, J.J., DeNatale, J.F., Hong, J.H.
Format: Conference Proceeding
Language:English
Subjects:
Gain
Gallium arsenide
Insertion loss
Micromechanical devices
Microrelays
MMICs
Noise measurement
PHEMTs
Switches
Testing
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Summary:We report the successful integration of MEMS microrelays with PHEMT MMIC in a single monolithic structure. The process we describe here allows us to build MEMS microrelays along GaAs PHEMT devices without any sacrifice in performance or yield to either device. The test structure used the switches to activate one of two X-band LNAs. The switches have an insertion loss of less than 0.3 dB up to 50 GHz while the LNAs have a gain of 20 dB and 1.1 dB NF at 9 GHz.
DOI:10.1109/IMOC.1999.867103