Statistical design of the four-MOSFET structure

The statistical design of the four-MOSFET structure is presented in this paper. The quantitative measure of the effect of mismatch between the four transistors on nonlinearity and offset current is provided through contours. Optimization of transistor W and L values are demonstrated. The four-MOSFET...

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Bibliographic Details
Main Authors: Tarim, T.B., Kuntman, H.H., Ismail, M.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Current measurement
Design engineering
Linearity
Low voltage
MOSFETs
Resistors
Semiconductor device modeling
Transconductors
Very large scale integration
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Summary:The statistical design of the four-MOSFET structure is presented in this paper. The quantitative measure of the effect of mismatch between the four transistors on nonlinearity and offset current is provided through contours. Optimization of transistor W and L values are demonstrated. The four-MOSFET structure was fabricated through the MOSIS 2 /spl mu/m process using MOS transistor Level-3 model parameters. The experimental results are included in the paper.
DOI:10.1109/MWSCAS.1999.867199