GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates

Novel red light-emitting diodes (LEDs) based on GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure (DH) directly grown on [100] GaP substrates have been fabricated for the first time. The samples were grown by gas-source molecular beam epitaxy with an RF nitrogen radical beam source to incorporat...

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Bibliographic Details
Published in:IEEE photonics technology letters 2000-08, Vol.12 (8), p.960-962
Main Authors: Xin, H.P., Welty, R.J., Tu, C.W.
Format: Article
Language:English
Subjects:
DH-HEMTs
Etching
Gallium nitride
Light emitting diodes
Molecular beam applications
Molecular beam epitaxial growth
Molecular beams
Nitrogen
Radio frequency
Substrates
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Summary:Novel red light-emitting diodes (LEDs) based on GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure (DH) directly grown on [100] GaP substrates have been fabricated for the first time. The samples were grown by gas-source molecular beam epitaxy with an RF nitrogen radical beam source to incorporate N in GaP. Compared to conventional GaAs-based AlGaInP red LEDs, this novel LED structure eliminates the complicated steps of etching the light-absorption GaAs substrate and wafer-bonding to a transparent GaP substrate. Based on the uncoated devices made with the heterojunction bipolar transistor masks, the emission efficiency of the DH LEDs is 20 times stronger than that of a GaNP pn homojunction diode.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.867974