In situ Raman spectroscopic characterization of compound semiconductor free carrier concentration

Recently, developments in detectors, filters, and laser technology now make Raman spectroscopy more attractive as an in situ probe. The objective of this work is to develop and evaluate Raman spectroscopy as an in situ, spatially resolved probe of compound semiconductor electrical properties for use...

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Bibliographic Details
Main Authors: Maslar, J.E., Wang, C.A., Oakley, D.C.
Format: Conference Proceeding
Language:English
Subjects:
Chemical technology
Filters
Holography
Laboratories
Optical films
Phase measurement
Raman scattering
Spectroscopy
Substrates
Temperature
Online Access:Request full text
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Description
Summary:Recently, developments in detectors, filters, and laser technology now make Raman spectroscopy more attractive as an in situ probe. The objective of this work is to develop and evaluate Raman spectroscopy as an in situ, spatially resolved probe of compound semiconductor electrical properties for use in process monitoring and control.
ISSN:1099-4742
2376-8614
DOI:10.1109/LEOSST.2000.869719