A 58-64 GHz Transformer-based Differential Rectifier in 40 nm CMOS with -12 dBm Sensitivity for 1 V at 64 GHz

This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and im...

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Main Authors: Hao Gao, Leenaerts, Domine M. W., Baltus, Peter
Format: Conference Proceeding
Language:English
Subjects:
CMOS
CMOS technology
Inductors
mm-wave
rectifier
Rectifiers
Sensitivity
Topology
Voltage measurement
Wireless communication
wireless power transmission
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creator Hao Gao
Leenaerts, Domine M. W.
Baltus, Peter
description This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and implemented to improve the sensitivity. In this method, the input transformer performs voltage boosting function, inductor peaking function, and impedance transfer function simultaneously within a compact die size. The proposed rectifier topology achieves an excellent peak sensitivity of -12 dBm at 64 GHz for 1 V output voltage. The overall sensitivity over the entire operational range of 58-64 GHz is below - 5 dBm.
doi_str_mv 10.1109/MWSYM.2019.8700750
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source IEEE Xplore All Conference Series
subjects CMOS
CMOS technology
Inductors
mm-wave
rectifier
Rectifiers
Sensitivity
Topology
Voltage measurement
Wireless communication
wireless power transmission
title A 58-64 GHz Transformer-based Differential Rectifier in 40 nm CMOS with -12 dBm Sensitivity for 1 V at 64 GHz
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