Signal Generation Techniques in CMOS for Millimeter-Wave and Terahertz Applications

This paper presents the design of three millimeter-wave and terahertz signal sources that demonstrates the feasibility of high performance signal source implemented in CMOS. A triple-push oscillator consisted of two antiparallel LC ring oscillators is presented with a low phase noise of −88 dBc/Hz a...

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Bibliographic Details
Main Authors: Hsieh, Cuei-Ling, Hsieh, Yi-Chun, Lin, Jung-Hsun, Chen, Hong-Shen, Yang, Chieh-Ying, Liu, Jenny Yi-Chun
Format: Conference Proceeding
Language:English
Subjects:
CMOS
doublers
Frequency conversion
frequency synthesizer
Frequency synthesizers
Harmonic analysis
harmonic generation
millimeter-wave
multiplier
oscillators
Phase noise
Power generation
signal generation
terahertz
Transistors
triple-push
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Summary:This paper presents the design of three millimeter-wave and terahertz signal sources that demonstrates the feasibility of high performance signal source implemented in CMOS. A triple-push oscillator consisted of two antiparallel LC ring oscillators is presented with a low phase noise of −88 dBc/Hz at 1-MHz offset and a peak output power of −6 dBm at 210 GHz in a 90-nm CMOS process. An injection locked quadruple-push oscillator is then presented with a simulated output power of −16.3 dBm at 336 GHz and phase noise of −88 dBc/Hz at fundamental frequency in a 90-nm CMOS process. Lastly, a 330-GHz subharmonic injection locked frequency synthesizer is proposed. The core oscillator is based on the triple-push architecture. The frequency synthesizer achieves a simulated locking range of 5 GHz at 330 GHz with an output power of −8.6 dBm in a 40-nm CMOS process.
ISSN:2158-1525
DOI:10.1109/ISCAS.2019.8702069