Electron-shading characterization in a HDP contact etching process using a patterned CHARM wafer

In this work, a CHARM-2 wafer with high aspect ratio resist patterns has been used to quantitatively characterize the electron-shading effect in a HDP oxide etch reactor. Moreover, we show by the decrease of the maximum collected current that an ion shading phenomenon also occurs for the highest asp...

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Bibliographic Details
Main Authors: Carrere, J.-P., Poiroux, T., Lukaszek, W., Verove, C., Haond, M., Reimbold, G., Turban, G.
Format: Conference Proceeding
Language:English
Subjects:
Electrons
Etching
Inductors
Leakage current
Plasma applications
Plasma measurements
Plasma properties
Resists
Sensor phenomena and characterization
Voltage
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Summary:In this work, a CHARM-2 wafer with high aspect ratio resist patterns has been used to quantitatively characterize the electron-shading effect in a HDP oxide etch reactor. Moreover, we show by the decrease of the maximum collected current that an ion shading phenomenon also occurs for the highest aspect ratio. Finally, a careful analysis of antenna ratio effects may indicate the importance of UV assisted leakage current.
DOI:10.1109/PPID.2000.870575