New programming and erasing schemes for p-channel flash memory

In this work, a new programming scheme using a forward substrate bias during BBHE injection and a two-step erasing scheme has been suggested to improve the performances of p-channel flash memory. It has been found that applying a forward substrate bias increases the electron injection efficiency and...

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Bibliographic Details
Published in:IEEE electron device letters 2000-10, Vol.21 (10), p.491-493
Main Authors: Park, J.T., Chun, J.Y., Kim, H.K., Jang, S.J., Yu, C.G.
Format: Article
Language:English
Subjects:
Bias
Channel hot electron injection
Channels
Charge carrier processes
Degradation
Devices
Durability
Endurance
Flash memory
Flash memory (computers)
Gates
Hot carriers
Nonvolatile memory
Programming
Scalability
Solids
Substrate hot electron injection
Tunneling
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Summary:In this work, a new programming scheme using a forward substrate bias during BBHE injection and a two-step erasing scheme has been suggested to improve the performances of p-channel flash memory. It has been found that applying a forward substrate bias increases the electron injection efficiency and improves the cell's endurance characteristics. The two-step erasing scheme, where a channel erase cycle is added after the source erase operation, is found to reduce the gate current degradation and also to improve the cell's endurance characteristics.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.870611