RF-MEMS Based V-Band Impedance Tuner Driven by Integrated High-Voltage LDMOS Switch Matrix and Charge Pump

To demonstrate a fully integrated RF-MEMS based system including HV generation and switching circuitry, a V-Band (40 - 75GHz) single-stub impedance tuner comprising four RF-MEMS switches, a 40V charge pump, and LDMOS based HV switches is developed in a 0.25 \mu {\mathrm {m}} SiGe-BiCMOS technology....

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Bibliographic Details
Main Authors: Wipf, C., Sorge, R., Wipf, S. Tolunay, Goritz, A., Scheit, A., Kissinger, D., Kaynak, M.
Format: Conference Proceeding
Language:English
Subjects:
charge pump
Charge pumps
High-voltage switch matrix
Impedance
impedance tuner
LDMOS
RF-MEMS
Scattering parameters
Switches
Switching circuits
Tuners
V-Band
Voltage measurement
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Summary:To demonstrate a fully integrated RF-MEMS based system including HV generation and switching circuitry, a V-Band (40 - 75GHz) single-stub impedance tuner comprising four RF-MEMS switches, a 40V charge pump, and LDMOS based HV switches is developed in a 0.25 \mu {\mathrm {m}} SiGe-BiCMOS technology. The chip size of the designed impedance tuning circuit enables the integration into an on-wafer RF-probe used for noise parameter and load-pull measurements. With the integrated high-voltage generation and switching circuitry the wiring effort, which is necessary to control the integrated RF-MEMS based impedance tuning chip, can be drastically reduced. The operation of the on-chip high-voltage generation and switching circuitry is demonstrated by the measured S-parameters for various combinations of activated RF-MEMS switches. The four integrated RFMEMS switches enable 16 impedance states in the frequency range between 40GHz and 60GHz.
ISSN:2474-9761
DOI:10.1109/SIRF.2019.8709116