A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs

A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain current from a single test device, was tested using simulated and measured data o...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-07, Vol.66 (7), p.2979-2985
Main Authors: Rodriguez-Davila, Rodolfo, Ortiz-Conde, Adelmo, Avila-Avendano, Carlos, Quevedo-Lopez, Manuel A.
Format: Article
Language:English
Subjects:
Electrical resistance measurement
Electronic devices
Indium gallium zinc oxide
Logic gates
Mobility enhancement factor
MOSFET
MOSFETs
Parameter extraction
parasitic series resistance
Resistance
Resistance factors
Semiconductor devices
Thin film transistors
thin-film transistors (TFTs)
Threshold voltage
Zinc oxide
Zinc oxides
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Summary:A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain current from a single test device, was tested using simulated and measured data of three different devices: amorphous indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), and polysilicon thin-film transistors (TFTs).
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2913699