Ultra-High Power Density Full-SiC Boost Converter Enabled by Advanced 3D-Printing Techniques

In this paper, a bidirectional boost converter featuring a very high power density of more than 55 kW/dm 3 is presented. The high level of integration is enabled by the use of SiC MOSFETs operated at a switching frequency of 450 kHz and by advanced 3D-printing techniques used to produce a miniature...

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Bibliographic Details
Main Authors: Wienhausen, Arne Hendrik, Sewergin, Alexander, De Doncker, Rik W.
Format: Conference Proceeding
Language:English
Subjects:
Cooling
Copper
Inductors
MOSFET
Silicon carbide
Switching frequency
Voltage measurement
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Summary:In this paper, a bidirectional boost converter featuring a very high power density of more than 55 kW/dm 3 is presented. The high level of integration is enabled by the use of SiC MOSFETs operated at a switching frequency of 450 kHz and by advanced 3D-printing techniques used to produce a miniature pin-fin fluid cooler for the dissipation of transistor and inductor losses. In conjunction with power inductors, which are based on 3D-printed bobbins and optimized for high-frequency operation, this allows power densities to be achieved that significantly exceed the state of the art.
ISSN:2470-6647
DOI:10.1109/APEC.2019.8721856