Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

A phenomenological expression for predicting atmospheric neutron-induced failure rates in silicon carbide (SiC) power devices is presented. This expression that relates the local electric field to terrestrial neutron-induced failure rate is derived using empirical data that show commonalities betwee...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2019-07, Vol.66 (7), p.1828-1832
Main Authors: Akturk, A., McGarrity, J. M., Goldsman, N., Lichtenwalner, D. J., Hull, B., Grider, D., Wilkins, R.
Format: Article
Language:English
Subjects:
CAD
Carbide tools
Computer aided design
Cosmic radiation
Cosmic rays
Doping
Electric fields
Electronic devices
Failure
Failure in time (FIT)
Failure rates
Ionization
Neutrons
power devices
Predictive models
Radiation
reliability
Sea measurements
Silicon
Silicon carbide
silicon carbide (SiC)
Terrestrial environments
terrestrial neutrons
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Summary:A phenomenological expression for predicting atmospheric neutron-induced failure rates in silicon carbide (SiC) power devices is presented. This expression that relates the local electric field to terrestrial neutron-induced failure rate is derived using empirical data that show commonalities between failures of different SiC power devices under this type of radiation. We also present a physics-based approach that provides a similar functional form for predicting these failure rates. The proposed closed-form expression is then used to demonstrate the use of this model in predicting failure rates in a hypothetical silicon carbide power device modeled using a technology computer-aided design tool.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2019.2919334