Electrical Stability Analysis of Dynamic Logic Using Amorphous Indium-Gallium-Zinc-Oxide TFTs

Prior research has reported that the device characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been changed by instabilities due to electrical stress. Because positive bias stress and high current stress produce a positive threshold voltage shift, if th...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2019-07, Vol.40 (7), p.1128-1131
Main Authors: Kim, Yong-Duck, Kim, Jong-Seok, Lee, Jong-Il, Han, Ki-Lim, Kim, Beom-Su, Park, Jin-Seong, Choi, Byong-Deok
Format: Article
Language:English
Subjects:
Amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs)
Circuit stability
dynamic logic
electrical stress
Inverters
Logic circuits
Logic gates
Stability analysis
Stress
TFTs
Thin film transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Prior research has reported that the device characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been changed by instabilities due to electrical stress. Because positive bias stress and high current stress produce a positive threshold voltage shift, if the digital logic circuit is designed using a-IGZO TFTs, there is a high possibility that the circuit suffers from malfunction. In this letter, the dynamic and the static logic circuits using n-type a-IGZO TFTs are compared in terms of stability for electrical stress. In order to compare the stability of the two circuits, DC and AC signals are applied. The measurement results suggest that the dynamic logic circuit is much more stable than the static logic circuit regarding electrical stress.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2920634