Precision Polishing of Single Crystal Diamond (111) Substrates Using a Sol-Gel (SG) Polishing Pad

In recent years, the application prospect of single crystal diamond (SCD) in the field of electronics is remarkable, and material processing technologies are the basis for the application of semiconductor materials. In this paper, a novel polishing method for SCD substrates was developed utilizing a...

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 2019-08, Vol.32 (3), p.341-345
Main Authors: Lu, Jing, Xiao, Ping, Tong, Ruilong, Luo, Qiufa, Xu, Xipeng
Format: Article
Language:English
Subjects:
Amorphization
Debris
Diamond
Diamond polishing
Diamonds
Graphitization
Material removal rate (machining)
Microscopy
Morphology
Phase transitions
Polishing
Raman spectroscopy
removal mechanism
Rough surfaces
Scanning electron microscopy
Semiconductor materials
single crystal diamond (SCD)
Single crystals
sol-gel (SG) polishing pad
Sol-gel processes
Substrates
Surface morphology
Surface roughness
Surface topography
Surface treatment
Transmission electron microscopy
Wear particles
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Summary:In recent years, the application prospect of single crystal diamond (SCD) in the field of electronics is remarkable, and material processing technologies are the basis for the application of semiconductor materials. In this paper, a novel polishing method for SCD substrates was developed utilizing a sol-gel (SG) polishing pad, which is a semi-fixed abrasive polishing tool fabricated by SG technique. The surface morphology of SCD substrates was observed with a 3-D optical profiler and scanning electron microscopy (SEM). The results showed that the surface roughness was 1.32 nm Ra and the material removal rate of SCD (111) was about 120 nm/h. The polished diamond surfaces and wear debris were investigated using Raman spectroscopy and transmission electron microscopy (TEM), respectively. The results showed the removal mechanism of SCD using an SG polishing pad was mainly dominated by the mechanical removal and phase transformation, including the mechanical cleavage, amorphization, and graphitization.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2019.2921873