HiSIMIGBT2: Modeling of the Dynamically Varying Balance Between MOSFET and BJT Contributions During Switching Operations

• Published in: IEEE transactions on electron devices 2019-08, Vol.66 (8), p.3265-3272
• Main Authors: Tone, A., Miyaoku, Y., Miura-Mattausch, M., Kikuchihara, H., Feldmann, U., Saito, T., Mizoguchi, T., Yamamoto, T., Mattausch, H. J.
• Format: Article
• Language: English
• Subjects: Compact model; Electric potential; high injection condition; high-voltage mosfet; insulated gate bipolar transistor (IGBT); Insulated gate bipolar transistors; Integrated circuit modeling; Mathematical model; MOSFET; Numerical models; potential distribution; resistance model; Semiconductor device modeling
• ISSN: 0018-9383
• DOI: 10.1109/TED.2019.2919799

The second generation of the compact HiSIM_IGBT model for circuit simulation is reported. HiSIM_IGBT2 is developed on the basis of an adapted version of the high-voltage mosfet model HiSIM_HV and solves the Poisson equation along the complete device iteratively in a consistent way. The major HiSIM_IGBT2 improvement concerns the description of the mosfet contribution to the dynamically varying resistance effect in the base-region of the bipolar transistor (BJT) part of the insulated gate bipolar transistor (IGBT). An important finding is that the IGBT mostly operates under the high-injection condition, namely, under the drift mechanism for the transport of the injected carriers, and that a subtle balancing of the contributions from bipolar control and mosfet control of the IGBT is required. The developed model is verified with 2-D-numerical device simulation to accurately reproduce the potential distribution within the IGBT. Therefore, the specific IGBT features, induced by the highly resistive base region under the high-injection condition, are self-consistently captured. The developed model is proven to provide stable circuit simulations with accurate reproduction of the switching performances.