Differential Variable Base Charge Pumping ( \Delta-\text) for SiO2/SiC Interface Characterization

We propose an electrical evaluation technique named differential charge pumping (Δ-CP) to extract information on the interface states (D it ) at the SiC/SiO 2 interface. This technique allows to obtain information on (1) the physical location of the D it ; (2) the energetic spread of the D it in the...

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Bibliographic Details
Main Authors: Moens, P., Constant, A., Stockman, A., Franchi, J., Allerstam, F.
Format: Conference Proceeding
Language:English
Subjects:
acceptor states
charge pumping
Charge pumps
Data mining
donor
Interface states
Logic gates
Photonic band gap
Predictive models
SiC
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Summary:We propose an electrical evaluation technique named differential charge pumping (Δ-CP) to extract information on the interface states (D it ) at the SiC/SiO 2 interface. This technique allows to obtain information on (1) the physical location of the D it ; (2) the energetic spread of the D it in the bandgap; (3) if the D it are donor or acceptor type. First results indicate contributions from both the "S/D" region and the channel regions to the overall CP signal. Surprisingly a substantial contribution of the "S/D" regions of the transistors to the overall CP signal is observed. In the channel region, both donors and acceptor type states are identified, the majority being acceptor type.
ISSN:1946-0201
DOI:10.1109/ISPSD.2019.8757560