Breakthrough in Channel Mobility Limit of Nitrided Gate Insulator for SiC DMOSFET with Novel High-temperature N2 Annealing

We have improved the limited channel mobility of nitridation on silicon carbide Si-face planar MOSFET to 50 cm 2 /Vs with the newly developed gate insulator process. Using the novel high-temperature N 2 annealing process, nitrogen whose density is twice that of the nitrogen used in the conventional...

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Bibliographic Details
Main Authors: Asaba, S., Ito, T., Fukatsu, S., Nakabayashi, Y., Shimizu, T., Furukawa, M., Suzuki, T., Iijima, R.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Insulators
interface
Logic gates
mobility
MOSFET
Nitrogen
reliability
SiC
Silicon
Silicon carbide
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Summary:We have improved the limited channel mobility of nitridation on silicon carbide Si-face planar MOSFET to 50 cm 2 /Vs with the newly developed gate insulator process. Using the novel high-temperature N 2 annealing process, nitrogen whose density is twice that of the nitrogen used in the conventional NO x process can be introduced to the MOS interface. The developed N 2 annealing is applied to a 1.2 kV class vertical MOSFET and remarkable reduction of the on-resistance has been demonstrated.
ISSN:1946-0201
DOI:10.1109/ISPSD.2019.8757649