Photon-Enhanced Conductivity Modulation and Surge Current Capability in Vertical GaN Power Rectifiers

In this work, we investigate the temperature-dependent forward conduction performance, the reverse recovery behavior and surge current capability of the vertical GaN Schottky barrier diode (SBD) and PN diode (PND). Compared with the SBD, the vertical GaN PND can deliver photon-enhanced conductivity...

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Bibliographic Details
Main Authors: Han, Shaowen, Yang, Shu, Li, Yongkai, Liu, Yinxiang, Sheng, Kuang
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Conductivity modulation
Current density
electroluminescence
Gallium nitride
GaN
Modulation
Photonics
power rectifiers
reverse recovery
surge current
Surges
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Summary:In this work, we investigate the temperature-dependent forward conduction performance, the reverse recovery behavior and surge current capability of the vertical GaN Schottky barrier diode (SBD) and PN diode (PND). Compared with the SBD, the vertical GaN PND can deliver photon-enhanced conductivity modulation (PECM), temperature-independent differential ON-resistance, and higher surge current capability. It is experimentally verified that the PECM and zero reverse recovery can be simultaneously realized in the vertical GaN PND.
ISSN:1946-0201
DOI:10.1109/ISPSD.2019.8757671