Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET

Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W Ch ) from 20 nm to 1000 nm and gate lengths (L G ) from 100 nm to 2000 nm. Experimental results show that W Ch is smaller than 30 nm and...

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Bibliographic Details
Main Authors: Chen, Pin-Jui, Tsai, Meng-Ju, Hou, Fu-Ju, Wu, Yung-Chun
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
FinFETs
Hafnium compounds
Logic gates
Silicon
Online Access:Request full text
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Summary:Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W Ch ) from 20 nm to 1000 nm and gate lengths (L G ) from 100 nm to 2000 nm. Experimental results show that W Ch is smaller than 30 nm and L G > W Ch , this proposed 5-nm-HZO Si NC-FinFET guarantees SS < 60 mV/decade.
ISSN:2161-4644
DOI:10.23919/SNW.2019.8782894