Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET

Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W Ch ) from 20 nm to 1000 nm and gate lengths (L G ) from 100 nm to 2000 nm. Experimental results show that W Ch is smaller than 30 nm and...

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Main Authors: Chen, Pin-Jui, Tsai, Meng-Ju, Hou, Fu-Ju, Wu, Yung-Chun
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
FinFETs
Hafnium compounds
Logic gates
Silicon
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Tsai, Meng-Ju
Hou, Fu-Ju
Wu, Yung-Chun
description Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W Ch ) from 20 nm to 1000 nm and gate lengths (L G ) from 100 nm to 2000 nm. Experimental results show that W Ch is smaller than 30 nm and L G > W Ch , this proposed 5-nm-HZO Si NC-FinFET guarantees SS < 60 mV/decade.
doi_str_mv 10.23919/SNW.2019.8782894
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fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_8782894</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8782894</ieee_id><sourcerecordid>8782894</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-ac0aefc50d941f32456d69f20fa2c889b0a77a09bcd4b3fb5fce7a8785afaf6c3</originalsourceid><addsrcrecordid>eNpFUNtKAzEUjIpgrf0A8SU_sGvul8ey2FYo7YMFxZdyNpvYaJst2UWoX--CBedhBmY4B2YQuqekZNxS-_iyei0ZobY02jBjxQW6FUZxYTSh5BKNGFW0EEqIq_-A2Rs06bpPMkBrK5gZobdqBxlc73P8gT62CUNq8DTB_tTFDrcBS5wORb-L7gsvAinlex5ozXBoM175j-Ho2-MKjuBiD8l5PItp9rS5Q9cB9p2fnHWMNoNbLYrlev5cTZdFtKQvwBHwwUnSWEEDZ0KqRtnASADmjLE1Aa2B2No1ouahlsF5DUNnCQGCcnyMHv7eRu_99pjjAfJpex6F_wJlnlM3</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET</title><source>IEEE Xplore All Conference Series</source><creator>Chen, Pin-Jui ; Tsai, Meng-Ju ; Hou, Fu-Ju ; Wu, Yung-Chun</creator><creatorcontrib>Chen, Pin-Jui ; Tsai, Meng-Ju ; Hou, Fu-Ju ; Wu, Yung-Chun</creatorcontrib><description>Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W Ch ) from 20 nm to 1000 nm and gate lengths (L G ) from 100 nm to 2000 nm. Experimental results show that W Ch is smaller than 30 nm and L G &gt; W Ch , this proposed 5-nm-HZO Si NC-FinFET guarantees SS &lt; 60 mV/decade.</description><identifier>ISBN: 4863487029</identifier><identifier>ISBN: 9784863487024</identifier><identifier>EISSN: 2161-4644</identifier><identifier>EISBN: 4863487010</identifier><identifier>EISBN: 9784863487017</identifier><identifier>DOI: 10.23919/SNW.2019.8782894</identifier><language>eng</language><publisher>JSAP</publisher><subject>Capacitance ; FinFETs ; Hafnium compounds ; Logic gates ; Silicon</subject><ispartof>2019 Silicon Nanoelectronics Workshop (SNW), 2019, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8782894$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,23929,23930,25139,27924,54554,54931</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8782894$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, Pin-Jui</creatorcontrib><creatorcontrib>Tsai, Meng-Ju</creatorcontrib><creatorcontrib>Hou, Fu-Ju</creatorcontrib><creatorcontrib>Wu, Yung-Chun</creatorcontrib><title>Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET</title><title>2019 Silicon Nanoelectronics Workshop (SNW)</title><addtitle>SNW</addtitle><description>Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W Ch ) from 20 nm to 1000 nm and gate lengths (L G ) from 100 nm to 2000 nm. Experimental results show that W Ch is smaller than 30 nm and L G &gt; W Ch , this proposed 5-nm-HZO Si NC-FinFET guarantees SS &lt; 60 mV/decade.</description><subject>Capacitance</subject><subject>FinFETs</subject><subject>Hafnium compounds</subject><subject>Logic gates</subject><subject>Silicon</subject><issn>2161-4644</issn><isbn>4863487029</isbn><isbn>9784863487024</isbn><isbn>4863487010</isbn><isbn>9784863487017</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2019</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFUNtKAzEUjIpgrf0A8SU_sGvul8ey2FYo7YMFxZdyNpvYaJst2UWoX--CBedhBmY4B2YQuqekZNxS-_iyei0ZobY02jBjxQW6FUZxYTSh5BKNGFW0EEqIq_-A2Rs06bpPMkBrK5gZobdqBxlc73P8gT62CUNq8DTB_tTFDrcBS5wORb-L7gsvAinlex5ozXBoM175j-Ho2-MKjuBiD8l5PItp9rS5Q9cB9p2fnHWMNoNbLYrlev5cTZdFtKQvwBHwwUnSWEEDZ0KqRtnASADmjLE1Aa2B2No1ouahlsF5DUNnCQGCcnyMHv7eRu_99pjjAfJpex6F_wJlnlM3</recordid><startdate>201906</startdate><enddate>201906</enddate><creator>Chen, Pin-Jui</creator><creator>Tsai, Meng-Ju</creator><creator>Hou, Fu-Ju</creator><creator>Wu, Yung-Chun</creator><general>JSAP</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201906</creationdate><title>Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET</title><author>Chen, Pin-Jui ; Tsai, Meng-Ju ; Hou, Fu-Ju ; Wu, Yung-Chun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-ac0aefc50d941f32456d69f20fa2c889b0a77a09bcd4b3fb5fce7a8785afaf6c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Capacitance</topic><topic>FinFETs</topic><topic>Hafnium compounds</topic><topic>Logic gates</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, Pin-Jui</creatorcontrib><creatorcontrib>Tsai, Meng-Ju</creatorcontrib><creatorcontrib>Hou, Fu-Ju</creatorcontrib><creatorcontrib>Wu, Yung-Chun</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Pin-Jui</au><au>Tsai, Meng-Ju</au><au>Hou, Fu-Ju</au><au>Wu, Yung-Chun</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET</atitle><btitle>2019 Silicon Nanoelectronics Workshop (SNW)</btitle><stitle>SNW</stitle><date>2019-06</date><risdate>2019</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><eissn>2161-4644</eissn><isbn>4863487029</isbn><isbn>9784863487024</isbn><eisbn>4863487010</eisbn><eisbn>9784863487017</eisbn><abstract>Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W Ch ) from 20 nm to 1000 nm and gate lengths (L G ) from 100 nm to 2000 nm. Experimental results show that W Ch is smaller than 30 nm and L G &gt; W Ch , this proposed 5-nm-HZO Si NC-FinFET guarantees SS &lt; 60 mV/decade.</abstract><pub>JSAP</pub><doi>10.23919/SNW.2019.8782894</doi><tpages>2</tpages></addata></record>
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subjects Capacitance
FinFETs
Hafnium compounds
Logic gates
Silicon
title Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T21%3A52%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Characterization%20and%20Analysis%20of%205%20nm-thick%20Hf0.5Zr0.5O2%20for%20Negative%20Capacitance%20FinFET&rft.btitle=2019%20Silicon%20Nanoelectronics%20Workshop%20(SNW)&rft.au=Chen,%20Pin-Jui&rft.date=2019-06&rft.spage=1&rft.epage=2&rft.pages=1-2&rft.eissn=2161-4644&rft.isbn=4863487029&rft.isbn_list=9784863487024&rft_id=info:doi/10.23919/SNW.2019.8782894&rft.eisbn=4863487010&rft.eisbn_list=9784863487017&rft_dat=%3Cieee_CHZPO%3E8782894%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-ac0aefc50d941f32456d69f20fa2c889b0a77a09bcd4b3fb5fce7a8785afaf6c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=8782894&rfr_iscdi=true