Atomic-level Analysis by Synchrotron Radiation and Characterization of 2 nm, 3 nm, and 5 nm-thick Hf0.5 Zr0.5 O2 Negative Capacitance FinFET

We report 2 nm, 3nm, and 5 nm-thick Hf_{0.5} Zr_{0.5} O_{2} (HZO) thin film by atomic-level characterization of negative capacitance Fin field effect transistors (NC-FinFET). GI-XRD by synchrotron radiation results reveal that HZO thin film has a clear orthorhombic(o) crystalline phase even in 2 nm-...

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Bibliographic Details
Main Authors: Tsai, Meng-Ju, Chen, Pin-Jui, Peng, Po-Yang, Hou, Fu-Ju, Wu, Yung-Chun
Format: Conference Proceeding
Language:English
Subjects:
Atomic measurements
Capacitance
FinFETs
Hafnium compounds
Synchrotron radiation
Very large scale integration
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Summary:We report 2 nm, 3nm, and 5 nm-thick Hf_{0.5} Zr_{0.5} O_{2} (HZO) thin film by atomic-level characterization of negative capacitance Fin field effect transistors (NC-FinFET). GI-XRD by synchrotron radiation results reveal that HZO thin film has a clear orthorhombic(o) crystalline phase even in 2 nm-thick HZO. The proposed NC-FinFETs show sub-60 mV/decade subthreshold slope (SS) and nearly hysteresis-free behaviors, compared to baseline HfO 2 FinFET.
ISSN:2161-4644
DOI:10.23919/SNW.2019.8782956