Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque

• Published in: IEEE electron device letters 2019-09, Vol.40 (9), p.1554-1557
• Main Authors: Yang, Meiyin, Deng, Yongcheng, Wu, Zhenhua, Cai, Kaiming, Edmonds, Kevin William, Li, Yucai, Sheng, Yu, Wang, Sumei, Cui, Yan, Luo, Jun, Ji, Yang, Zheng, Hou-Zhi, Wang, Kaiyou
• Format: Article
• Language: English
• Subjects: Electric field; Electric fields; Energy consumption; Ferroelectric materials; Ferroelectricity; Ferromagnetism; Heavy metals; Lead titanates; Logic; Logic functions; Logic gates; Magnetic switching; Magnetic tunneling; Magnetization; Magnetization reversal; Polarization; Resistance; spin-orbit torque; Stability; Substrates; Switches; Torque
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2019.2932479

We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet/heavy metal structures on a ferroelectric (1- {x} ) [Pb(Mg 1/3 Nb 2/3 )O 3 ]- x [PbTiO3] (PMN-PT) substrate using current-induced spin-orbit torque. The devices were operated without an external magnetic field and controlled by voltages as low as 10 V applied across the PMN-PT substrate, which is much lower compared with the previous reports (500 V). The deterministic switching with smaller voltage was realized from the virgin state of the PMN-PT. The ferroelectric simulation shows the unsaturated minor loop exhibits obvious asymmetries in the polarizations. Larger polarization can be induced from the initial ferroelectric state, while it is difficult for opposite polarization. The XNOR, AND, NAND, and NOT logic functions were demonstrated by the deterministic magnetization switching from the interaction between the spin-orbit torque and electric field at the PMN-PT/Pt interface. The nonvolatile spin logic scheme in this letter is simple, scalable, and programmable, which are favorable in the logic-in-memory design with low energy consumption.