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Analysis MOSFET Parasitic Capacitances to Class- B Power Amplifier
This paper has presented the analysis of class-B power amplifier with MOSFET parasitic nonlinear capacitances. Since in the PA, efficiency, linearity, and power capacity are dependent on the parasitic elements of the MOSFET transistor. In this paper, we investigate the efficiency, linearity, and pow...
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creator | Nasri, Abbas Toofan, Siroos |
description | This paper has presented the analysis of class-B power amplifier with MOSFET parasitic nonlinear capacitances. Since in the PA, efficiency, linearity, and power capacity are dependent on the parasitic elements of the MOSFET transistor. In this paper, we investigate the efficiency, linearity, and power capacity with transistor parasitic elements. The measurement and simulation analysis have been made for the IRF510 model transistor in PSpice simulation. The experimental results confirm theoretical analysis on the parasitic elements of the MOSFET transistor that shows the validity performed analysis. The measurement results show an output power of 19.4 dBm at input power -10 dBm for 6 MHz with PAE of 40%. |
doi_str_mv | 10.1109/IranianCEE.2019.8786547 |
format | conference_proceeding |
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Since in the PA, efficiency, linearity, and power capacity are dependent on the parasitic elements of the MOSFET transistor. In this paper, we investigate the efficiency, linearity, and power capacity with transistor parasitic elements. The measurement and simulation analysis have been made for the IRF510 model transistor in PSpice simulation. The experimental results confirm theoretical analysis on the parasitic elements of the MOSFET transistor that shows the validity performed analysis. The measurement results show an output power of 19.4 dBm at input power -10 dBm for 6 MHz with PAE of 40%.</description><identifier>EISSN: 2642-9527</identifier><identifier>EISBN: 9781728115078</identifier><identifier>EISBN: 1728115078</identifier><identifier>EISBN: 1728115086</identifier><identifier>EISBN: 9781728115085</identifier><identifier>DOI: 10.1109/IranianCEE.2019.8786547</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; class-B ; Efficiency ; Linearity ; MOSFET circuits ; nonlinear capacitance ; power amplifier ; Power amplifiers ; power capacity ; SPICE</subject><ispartof>2019 27th Iranian Conference on Electrical Engineering (ICEE), 2019, p.144-148</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8786547$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,27925,54555,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8786547$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nasri, Abbas</creatorcontrib><creatorcontrib>Toofan, Siroos</creatorcontrib><title>Analysis MOSFET Parasitic Capacitances to Class- B Power Amplifier</title><title>2019 27th Iranian Conference on Electrical Engineering (ICEE)</title><addtitle>IranianCEE</addtitle><description>This paper has presented the analysis of class-B power amplifier with MOSFET parasitic nonlinear capacitances. Since in the PA, efficiency, linearity, and power capacity are dependent on the parasitic elements of the MOSFET transistor. In this paper, we investigate the efficiency, linearity, and power capacity with transistor parasitic elements. The measurement and simulation analysis have been made for the IRF510 model transistor in PSpice simulation. The experimental results confirm theoretical analysis on the parasitic elements of the MOSFET transistor that shows the validity performed analysis. The measurement results show an output power of 19.4 dBm at input power -10 dBm for 6 MHz with PAE of 40%.</description><subject>Capacitance</subject><subject>class-B</subject><subject>Efficiency</subject><subject>Linearity</subject><subject>MOSFET circuits</subject><subject>nonlinear capacitance</subject><subject>power amplifier</subject><subject>Power amplifiers</subject><subject>power capacity</subject><subject>SPICE</subject><issn>2642-9527</issn><isbn>9781728115078</isbn><isbn>1728115078</isbn><isbn>1728115086</isbn><isbn>9781728115085</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2019</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj9FKwzAUQKMgOGa_wAfzA625SdMkj1upbjDZQH0et-ktRLquJAXZ3ztwT-fpHDiMvYAoAIR73UYcA4510xRSgCussZUuzR3LnLFgpAXQwth7tpBVKXOnpXlkWUo_QggF1lqnF2y9GnG4pJD4x_7zrfniB4yYwhw8r3FCH2YcPSU-n3k9YEo5X_PD-ZciX52mIfSB4hN76HFIlN24ZN_XUL3Jd_v3bb3a5QGMnnPqvNCSWiNVSWQINSoplMXeOVDUyw7aDnzftdR7ct6VUquuq1qwV6cVasme_7uBiI5TDCeMl-PtWv0BSqdNUg</recordid><startdate>201904</startdate><enddate>201904</enddate><creator>Nasri, Abbas</creator><creator>Toofan, Siroos</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201904</creationdate><title>Analysis MOSFET Parasitic Capacitances to Class- B Power Amplifier</title><author>Nasri, Abbas ; Toofan, Siroos</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-edc052eb7234ee7ea5a32038af9913ef2d1bd1cfdbefce9c94253dd6b18b72b03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Capacitance</topic><topic>class-B</topic><topic>Efficiency</topic><topic>Linearity</topic><topic>MOSFET circuits</topic><topic>nonlinear capacitance</topic><topic>power amplifier</topic><topic>Power amplifiers</topic><topic>power capacity</topic><topic>SPICE</topic><toplevel>online_resources</toplevel><creatorcontrib>Nasri, Abbas</creatorcontrib><creatorcontrib>Toofan, Siroos</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nasri, Abbas</au><au>Toofan, Siroos</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Analysis MOSFET Parasitic Capacitances to Class- B Power Amplifier</atitle><btitle>2019 27th Iranian Conference on Electrical Engineering (ICEE)</btitle><stitle>IranianCEE</stitle><date>2019-04</date><risdate>2019</risdate><spage>144</spage><epage>148</epage><pages>144-148</pages><eissn>2642-9527</eissn><eisbn>9781728115078</eisbn><eisbn>1728115078</eisbn><eisbn>1728115086</eisbn><eisbn>9781728115085</eisbn><abstract>This paper has presented the analysis of class-B power amplifier with MOSFET parasitic nonlinear capacitances. Since in the PA, efficiency, linearity, and power capacity are dependent on the parasitic elements of the MOSFET transistor. In this paper, we investigate the efficiency, linearity, and power capacity with transistor parasitic elements. The measurement and simulation analysis have been made for the IRF510 model transistor in PSpice simulation. The experimental results confirm theoretical analysis on the parasitic elements of the MOSFET transistor that shows the validity performed analysis. The measurement results show an output power of 19.4 dBm at input power -10 dBm for 6 MHz with PAE of 40%.</abstract><pub>IEEE</pub><doi>10.1109/IranianCEE.2019.8786547</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
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ispartof | 2019 27th Iranian Conference on Electrical Engineering (ICEE), 2019, p.144-148 |
issn | 2642-9527 |
language | eng |
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source | IEEE Xplore All Conference Series |
subjects | Capacitance class-B Efficiency Linearity MOSFET circuits nonlinear capacitance power amplifier Power amplifiers power capacity SPICE |
title | Analysis MOSFET Parasitic Capacitances to Class- B Power Amplifier |
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