Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression

A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2019-09, Vol.29 (9), p.598-600
Main Authors: Gibiino, Gian Piero, Santarelli, Alberto, Cignani, Rafael, Traverso, Pier Andrea, Filicori, Fabio
Format: Article
Language:English
Subjects:
Empirical modeling
Field effect transistors
field-effect transistor (FET)
GaN
Parameter identification
parasitic effects
Regression analysis
Semiconductor devices
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Summary:A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2019.2933095