2D Modeling of InGaP/GaAs/InGaAs Four-Junction Solar Cell

Two-dimensional (2D) modeling is reported for InGaP/GaAs/InGaAs four-junction solar cell with tunnel junctions. The cell basic physical properties were demonstrated. The simulated results indicate one-sun efficiency about 40.1% with short-circuit current density as 126.63 A/m 2 and open-circuit volt...

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Bibliographic Details
Main Authors: Xiao, Y. G., Sheng, Y., Li, Z. Q., Simon Li, Z. M.
Format: Conference Proceeding
Language:English
Subjects:
Indium gallium arsenide
Junctions
Lighting
Photonic band gap
Photovoltaic cells
Sun
Two dimensional displays
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Summary:Two-dimensional (2D) modeling is reported for InGaP/GaAs/InGaAs four-junction solar cell with tunnel junctions. The cell basic physical properties were demonstrated. The simulated results indicate one-sun efficiency about 40.1% with short-circuit current density as 126.63 A/m 2 and open-circuit voltage as 3.69V. High efficiency up to 45.9% under 100 sun illumination could be achieved.
ISSN:2158-3234
DOI:10.1109/NUSOD.2019.8806906