IGCT Low-Current Switching-TCAD and Experimental Characterization

Utilization of the integrated gate-commutated thyristor as a semiconductor switch in the series resonant converter for isolated medium-voltage dc-dc conversion offers an opportunity for high conversion efficiency while operating at the high switching frequency. Low conduction losses of the switch as...

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Bibliographic Details
Published in:IEEE transactions on industrial electronics (1982) 2020-08, Vol.67 (8), p.6302-6311
Main Authors: Stamenkovic, Dragan, Vemulapati, Umamaheswara Reddy, Stiasny, Thomas, Rahimo, Munaf, Dujic, Drazen
Format: Article
Language:English
Subjects:
Clamps
Conduction losses
Conversion
Converters
DC transformer
Electric potential
Insulated gate bipolar transistors
integrated gate-commutated thyristor (IGCT)
Logic gates
Low currents
Medium voltage
medium-voltage direct current (MVdc)
resonant dc–dc converter
Semiconductor diodes
Switches
Switching
Thyristors
Topology
Voltage
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Summary:Utilization of the integrated gate-commutated thyristor as a semiconductor switch in the series resonant converter for isolated medium-voltage dc-dc conversion offers an opportunity for high conversion efficiency while operating at the high switching frequency. Low conduction losses of the switch as well as decreased switching losses due to zero-voltage turn- on and low-current turn- off in the subresonant operating regime are reflected in the efficiency increase of the converter. This article explores the switching behavior of the semiconductor device under low currents while giving insight into the achievable turn- off energy losses and duration of the turn- off transients, as information required during the design process of series resonant converter. Experimental measurements confirm trends observed with simulation results related to turn- off delay process, providing further understanding of the switching losses and achievable performances under resonant mode of operation.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2019.2939996