High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

Schottky diodes and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is 0.6 A cm -2 with the on/off ratio higher than 10 8 . Ideality factor and barrier...

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Bibliographic Details
Published in:IEEE electron device letters 2019-11, Vol.40 (11), p.1748-1751
Main Authors: Liu, Jiangwei, Teraji, Tokuyuki, Da, Bo, Koide, Yasuo
Format: Article
Language:English
Subjects:
Boron
boron-doped
Diamond
Diamonds
Diodes
Field effect transistors
Logic gates
MESFET
MESFETs
MOSFET
Schottky diodes
Semiconductor devices
Surface morphology
Surface properties
Transistors
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Summary:Schottky diodes and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is 0.6 A cm -2 with the on/off ratio higher than 10 8 . Ideality factor and barrier height for Pt metal on the boron-doped diamond are evaluated to be 1.07 and 1.38 eV, respectively. Drain current maximum for the MESFET is -0.55mA mm -1 , which is nine times higher than that of the previous report. Origin of it is possibly attributed to the good surface quality and high boron concentration for the B-diamond.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2942967