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High Efficiency Magnetic Flux Modulation Structure for Magnetoresistance Sensor

After decades of development, low modulation efficiency is still the bottleneck of magnetic flux modulation technology for 1/f noise reduction of magnetoresistance sensors. To address this difficulty, a simulation on modulation efficiency improvement was conducted. It was interpreted that the major...

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Bibliographic Details
Published in:IEEE electron device letters 2019-11, Vol.40 (11), p.1824-1827
Main Authors: Du, Qingfa, Peng, Junping, Qiu, Weicheng, Ding, Qiaochu, Pan, Mengchun, Hu, Jiafei, Sun, Kun, Chen, Dixiang, Pan, Long, Che, Yulu, Zhang, Xinmiao, Li, Peisen, Zhang, Bo
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Language:English
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Summary:After decades of development, low modulation efficiency is still the bottleneck of magnetic flux modulation technology for 1/f noise reduction of magnetoresistance sensors. To address this difficulty, a simulation on modulation efficiency improvement was conducted. It was interpreted that the major factors affecting the modulation efficiency were the initial position of the modulation film and its minimum distance to the magnetic sensitive element during the vibrating process. Moreover, size optimization and permeability increment of the modulation film also contribute to the increase in modulation efficiency. Given these simulation results, a piezoelectric actuated magnetic flux modulation structure with amplitude feedback function was proposed and then fabricated using micro-electromechanical system technology, primarily considering the initial height control, the expected amplitude control as well as the material properties of the modulation film. Test results of the sensor prototype suggested that the modulation efficiency is up to 68.7%, much higher than the currently reported value of 18.8%.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2944645