Strain-Engineered Ge Embedded into Microresonators as an Active Media for Si Photonics

Optical properties of tensile strained n-doped Ge microstructures were investigated. Formation of microresonators based on Bragg reflectors and photonic crystals were implemented for such kind of active medium and opportunities to employ them for fabrication of efficient Si-compatible light sources...

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Bibliographic Details
Main Authors: Yurasov, Dmitry V., Gusev, Nikita S., Dyakov, Sergey A., Nezhdanov, Alexey V., Novikov, Alexey V., Skorokhodov, Evgeny V., Verbus, Valeriy A., Yablonskiy, Artem N., Krasil'nik, Zakhariy F.
Format: Conference Proceeding
Language:English
Subjects:
Bridges
Germanium
Microstructure
Silicon
Stimulated emission
Strain
Online Access:Request full text
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Description
Summary:Optical properties of tensile strained n-doped Ge microstructures were investigated. Formation of microresonators based on Bragg reflectors and photonic crystals were implemented for such kind of active medium and opportunities to employ them for fabrication of efficient Si-compatible light sources were discussed.
ISSN:1949-209X
DOI:10.1109/GROUP4.2019.8853931