Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

In this letter, the endurance property of Hf 0.5 Zr 0.5 O 2 (HZO) based ferroelectric capacitor has been improved using Ru electrodes. Compared to the widely used TiN/HZO/TiN capacitor, the Ru/HZO/Ru capacitor shows comparable remnant polarization (~.20μC/cm 2 ), lower leakage current (5.67×10 -5 A/...

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Bibliographic Details
Published in:IEEE electron device letters 2019-11, Vol.40 (11), p.1744-1747
Main Authors: Cao, Rongrong, Liu, Qi, Liu, Ming, Song, Bing, Shang, Dashan, Yang, Yang, Luo, Qing, Wu, Shuyu, Li, Yue, Wang, Yan, Lv, Hangbing
Format: Article
Language:English
Subjects:
Breakdown
breakdown field
Capacitors
Durability
Electric breakdown
Electric fields
Electrode polarization
Electrodes
Endurance
endurance property
Ferroelectric materials
Ferroelectricity
Hafnium compounds
Leakage current
Leakage currents
Ru/HZO/Ru
Thin films
Tin
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Summary:In this letter, the endurance property of Hf 0.5 Zr 0.5 O 2 (HZO) based ferroelectric capacitor has been improved using Ru electrodes. Compared to the widely used TiN/HZO/TiN capacitor, the Ru/HZO/Ru capacitor shows comparable remnant polarization (~.20μC/cm 2 ), lower leakage current (5.67×10 -5 A/cm 2 ) and higher breakdown electric field (~4 MV/cm) at room temperature. The reduction of the leakage current and the enhancement of the breakdown electric field, which are ascribed to the small number of defects and vacancies in HZO thin films with Ru electrodes, prompt the endurance improvement of HZO-based capacitor from 3 × 10 10 cycles for TiN electrodes at 3 MV/cm to more than 1.2 × 10 11 cycles for Ru electrodes at 3.5 MV/cm. This work provides an effective way to reduce the leakage current and improve the endurance property of HZO-based capacitors.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2944960