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A novel LDMOS structure with high negative voltage capability for reverse battery protection in automotive IC's

A novel LDMOS device is presented, offering high reverse V/sub DS/ compared to the normal body-diode limit (-0.6 V). This device is well suited for applications requiring reverse battery protection.

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Bibliographic Details
Main Authors: Macary, V., Sicard, T., Petrutiu, R.
Format: Conference Proceeding
Language:English
Subjects:
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Description
Summary:A novel LDMOS device is presented, offering high reverse V/sub DS/ compared to the normal body-diode limit (-0.6 V). This device is well suited for applications requiring reverse battery protection.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2000.886180