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A novel LDMOS structure with high negative voltage capability for reverse battery protection in automotive IC's
A novel LDMOS device is presented, offering high reverse V/sub DS/ compared to the normal body-diode limit (-0.6 V). This device is well suited for applications requiring reverse battery protection.
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Main Authors: | , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | A novel LDMOS device is presented, offering high reverse V/sub DS/ compared to the normal body-diode limit (-0.6 V). This device is well suited for applications requiring reverse battery protection. |
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ISSN: | 1088-9299 2378-590X |
DOI: | 10.1109/BIPOL.2000.886180 |