A comparison of modern power device concepts for high voltage applications: field stop-IGBT, compensation devices and SiC devices

This article presents a comparison of recently introduced device concepts like the CoolMOS/sup TM/ to new promising approaches such as the field-stop IGBT and the actual trends in SiC devices. All of these devices are capable of blocking voltages in the 1000 V range. They are optimized for switching...

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Bibliographic Details
Main Authors: Deboy, G., Hulsken, H., Mitlehner, H., Rupp, R.
Format: Conference Proceeding
Language:English
Subjects:
Consumer electronics
Costs
Decision making
Electronics industry
Insulated gate bipolar transistors
Power semiconductor switches
Silicon carbide
Switched-mode power supply
Switching frequency
Voltage
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Description
Summary:This article presents a comparison of recently introduced device concepts like the CoolMOS/sup TM/ to new promising approaches such as the field-stop IGBT and the actual trends in SiC devices. All of these devices are capable of blocking voltages in the 1000 V range. They are optimized for switching frequencies up to 100 kHz and beyond and meet with different focus the requirements of applications like switch mode power supplies (SMPS), lighting or industry tasks.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2000.886190